Switching Diodes
1
MA4X194
Silicon epitaxial planar type
For switching circuits
I Features
Short reverse recovery time t
rr
Two isolated elements contained in one package, allowing high-
density mounting
I Absolute Maximum Ratings T
a
= 25
C
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
40
V
Repetitive peak reverse voltage
V
RRM
40
V
Average forward
Single
I
F(AV)
100
mA
current
Double
I
F(AV)
75
mA/Unit
Repetitive peak
Single
I
FRM
225
mA
forward current
Double
I
FRM
170
mA/Unit
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
I
FSM
375
mA/Unit
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R1
V
R
= 40 V
10
nA
I
R2
V
R
= 35 V, T
a
= 150C
10
A
Forward voltage (DC)
V
F
I
F
= 100 mA
0.98
1.2
V
Terminal capacitance
C
t
V
R
= 6 V, f = 1 MHz
1.0
2.0
pF
Forward dynamic resistance
r
f
*1
I
F
= 3 mA, f = 30 MHz
1.7
2.5
r
f
*2
I
F
= 3 mA, f = 30 MHz
3.6
Reverse recovery time
*3
t
rr
I
F
= 10 mA, V
R
= 6 V
100
ns
I
rr
= 0.1 I
R
, R
L
= 100
I Electrical Characteristics T
a
= 25
C
Internal Connection
Marking Symbol: M1F
Note) * : t = 1 s
Note) *1 : r
f
measuring instrument: Nihon Koshuha Model TDC-121A
*2 : r
f
measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3 : t
rr
measuring circuit
4
3
1
2
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
0.5 R
1
2
4
3
0.95
0.95
1.9
0.2
0.6
+
0.1
-
0
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
0.4
+
0.1
-
0.05
0.2
0.4
+
0.1
-
0.05
1.45
0.1 to 0.3
0.5
2.9
+
0.2
-
0.05
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
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